DocumentCode
3136153
Title
A new empirical RF model for deep-submicron MOSFET´s device
Author
Wong, J.S. ; Ma, J.-G. ; Yeo, K.S. ; Do, M.A.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fYear
2000
fDate
2000
Firstpage
1040
Lastpage
1043
Abstract
A RF model for MOSFET devices is presented. We used a new DC current model and assigned empirical equations to the 3 capacitors in our RF model such that the model can simulate the performance of the device under different bias conditions. This model can be easily implemented in any commercial CAD tools. The model was verified using measurement data of a 0.35 μm n-channel MOSFET
Keywords
MOSFET; S-parameters; UHF field effect transistors; UHF integrated circuits; equivalent circuits; semiconductor device models; 0.35 micron; DC current model; RFIC design; bias conditions; commercial CAD tool implementation; deep-submicron MOSFET device; empirical RF model; n-channel MOSFET; Capacitance; Capacitors; Current measurement; Design automation; Design optimization; Differential equations; Equivalent circuits; Fingers; MOSFET circuits; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.926006
Filename
926006
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