Title :
Novel poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor for high density DRAMs
Author :
Yeong Kwan Kim ; Sang Min Lee ; In Seen Park ; Chang Soo Park ; Sang In Lee ; Moon Yong Lee
Author_Institution :
Semiconductor R&D Center, Samsung Electron. Co. Ltd., Yongin-City, South Korea
Abstract :
A poly-Si/Al/sub 23//poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T/sub oxeq/) was achieved as small as 28 /spl Aring/, which corresponds to the capacitance of 26.8 fF/cell in 256 Mb DRAM with 0.26 /spl mu/m feature size. One of the distinguished characteristics of Al/sub 2/O/sub 3/ capacitor is that the capacitance was even enhanced by performing the conventional DRAM processes, including high temperature planarization known as BPSG flow, without degrading the leakage characteristics.
Keywords :
DRAM chips; alumina; capacitors; surface treatment; 0.26 micron; 256 Mbit; 26.8 fF; BPSG flow; Si-Al/sub 2/O/sub 3/-Si; capacitance; high density DRAM; high temperature planarization; leakage characteristics; oxide equivalent thickness; poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor; Amorphous materials; Capacitance; Capacitance-voltage characteristics; Capacitors; Electrodes; Material storage; Optical films; Random access memory; Refractive index; Temperature;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689195
