Title :
HEMT MMW MMICs for radiometer sensor applications
Author :
Lai, Richard ; Sarkozy, Stephen
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
This paper will review the progress of HEMT MMW MMIC technologies developed at Northrop Grumman Aerospace Systems for radiometer sensor applications. Specific HEMT MMIC functions that have been developed for the radiometer front-end include the RF LNA, IF LNA and LO driver power amplifiers. We report recent advancements in room and cryogenically operated InP HEMT low noise amplifiers and power amplifiers operating from 1 GHz to 300 GHz and discuss past and present system applications of these MMICs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; MMIC power amplifiers; indium compounds; low noise amplifiers; power amplifiers; radiometers; HEMT MMW MMIC; HEMT low noise amplifiers; IF LNA; LO driver power amplifiers; Northrop Grumman Aerospace Systems; RF LNA; frequency 1 GHz to 300 GHz; radiometer front-end; radiometer sensor; Driver circuits; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiometry; Sensor systems and applications;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517240
