Characterization and modeling of a GaAs HFET toward design of linear 2.4 GHz high power amplifier

Author

Khusaidi, A. ; Riyadi, M.A. ; Alam, B.R.

Author_Institution

Dept. of Electr. Eng., Inst. of Technol., Bandung, Indonesia

fYear

2000

fDate

2000

Firstpage

1056

Lastpage

1059

Abstract

A large signal HFET model based on the Curtice-Cubic model is constructed. Power GaAs HFET transistor SHF0186K is adopted for extraction. The DC and S-parameters characteristics of the transistor are used to derive the model. The simulation and measurement result of I-V and Y-parameter characteristics are compared

Keywords

III-V semiconductors; S-parameters; UHF field effect transistors; UHF power amplifiers; gallium arsenide; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; 2.4 GHz; Curtice-Cubic model; DC characteristics; GaAs; GaAs HFET; HFET characterization; I-V characteristics; S-parameters; SHF0186K device; Y-parameter characteristics; large signal model; linear high power amplifier design; modeling; power HFET; Gallium arsenide; HEMTs; High power amplifiers; Linearity; Low-noise amplifiers; MODFETs; Microwave transistors; Power amplifiers; Power system modeling; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926010

Filename

926010