Title :
Selective MBE growth of InGaAs and InAlAs on high-index facets and its application to fabrication of
Author :
Fujikura, H. ; Hasegawa, H.
Keywords :
Fabrication; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Quantum mechanics; Scanning electron microscopy; Substrates; Temperature; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522253
