Title :
A threshold voltage model for short channel GaAs OPFET for optical communication systems
Author :
Bose, S. ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
Abstract :
A new analytical model to show the photoeffects on the threshold voltage of optically controlled non-self-aligned short channel GaAs MESFET (OPFET) is presented by solving two-dimensional Poisson´s equation using Green´s function technique. It is found that when light radiation is allowed to fall on the gate metal, the threshold voltage of the device shifts increasingly towards the negative values. The developed model can be suitably implemented in monolithic microwave integrated circuits using optically controlled MESFET for high frequency optical communication systems
Keywords :
Green´s function methods; III-V semiconductors; Poisson equation; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; microwave photonics; optical communication equipment; phototransistors; semiconductor device models; GaAs; GaAs OPFET; Green function; MMIC; analytical model; optical communication system; optically controlled nonself-aligned short channel MESFET; threshold voltage; two-dimensional Poisson equation; Analytical models; Gallium arsenide; Green´s function methods; Integrated circuit modeling; MESFET integrated circuits; Microwave devices; Optical control; Poisson equations; Threshold voltage; Voltage control;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926015
