A threshold voltage model for short channel GaAs OPFET for optical communication systems

Author

Bose, S. ; Gupta, Mridula ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Delhi Univ., India

fYear

2000

fDate

2000

Firstpage

1077

Lastpage

1080

Abstract

A new analytical model to show the photoeffects on the threshold voltage of optically controlled non-self-aligned short channel GaAs MESFET (OPFET) is presented by solving two-dimensional Poisson´s equation using Green´s function technique. It is found that when light radiation is allowed to fall on the gate metal, the threshold voltage of the device shifts increasingly towards the negative values. The developed model can be suitably implemented in monolithic microwave integrated circuits using optically controlled MESFET for high frequency optical communication systems

Keywords

Green´s function methods; III-V semiconductors; Poisson equation; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; microwave photonics; optical communication equipment; phototransistors; semiconductor device models; GaAs; GaAs OPFET; Green function; MMIC; analytical model; optical communication system; optically controlled nonself-aligned short channel MESFET; threshold voltage; two-dimensional Poisson equation; Analytical models; Gallium arsenide; Green´s function methods; Integrated circuit modeling; MESFET integrated circuits; Microwave devices; Optical control; Poisson equations; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926015

Filename

926015