New methods for extracting field-stop IGBT model parameters by electrical measurements

The new generation of field-stop (FS) IGBT integrates the advantageous of former generations and adopts the latest power semiconductor manufacture technology, which enhances its power rating and synthesis performance remarkably. The IGBT physics-based simulator model is a useful tool for device manufacture and application, but the difficulty and complexity of existed parameters extraction methods limit the employment of these models, which also restricts the development of device application and system design level. Furthermore, these methods are not suitable for the new IGBT with a FS layer structure differ with the conventional PT and NPT IGBT. Based on its physical structure and work principle, this paper proposes some new parameters extraction methods for FS IGBT through the data measured from its three electrical ports. The extraction circuits and experiments to a EUPEC IGBT are also introduced, the results of experiments under different working conditions show good consistency, which also proves the accuracy of proposed methods. These extracted parameters are useful for devices structure design, performance optimality and application of the IGBT technology.