Dynamic stressing effects on reliability of strontium titanate (SrTiO/sub 3/) thin film capacitors for high-density memory applications

Author

Tung-Sheng Chen ; Balu, V. ; Katakam, S. ; Jian-Hung Lee ; Jeong Hee Han ; Jones, R.E. ; Gillespie, S.J. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1998

fDate

9-11 June 1998

Firstpage

54

Lastpage

55

Abstract

High dielectric constant SrTiO/sub 3/ films (/spl epsiv/=237 or C=70 fF//spl mu/m/sup 2/ measured at 100 kHz) have been fabricated and the dynamic stressing characteristics of these dielectrics has been studied for the first time. Time-dependent dielectric breakdown (TDDB) of SrTiO/sub 3/ is shown to be strongly dependent on frequency and duty cycle under dynamic stressing. On the other hand, dielectric dispersion does not exhibit significant dependence on pulse width or on-time of the stressing signal.

Keywords

DRAM chips; dielectric thin films; electric breakdown; permittivity; reliability; strontium compounds; thin film capacitors; 100 kHz; SrTiO/sub 3/; dielectric constant; dielectric dispersion; dynamic stress; high density memory; reliability; strontium titanate thin film capacitor; time dependent dielectric breakdown; Annealing; Capacitors; Dielectric thin films; Electrodes; Electron traps; Sputtering; Stress; Strontium; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689196

Filename

689196