• DocumentCode
    3136354
  • Title

    A novel multi-octave 5-bit GaAs MMIC phase shifter

  • Author

    Dai, Yong Sheng ; Chen, Xiao Jian

  • Author_Institution
    Nanjing Electron. Devices Inst., China
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1085
  • Lastpage
    1088
  • Abstract
    Design, fabrication and performance of a novel multi-octave five-bit GaAs MMIC phase shifter is described. The topology was specifically selected to minimize process variations on performance. The topology of 22.5 and 11.25 degree phase shift bits is a reflection type topology with a sharing Lange coupler. Low peak phase error (PPE) (⩽5 degree for 180, 90, 45 degree phase shift bits, ⩽2.5 degree for 22.5, 11.23 degree phase shift bits), low VSWR (±1.5), low insertion loss variations (⩽14±0.7 dB) are exhibited over 5 to 20 GHz frequency range. The chip size of the 5-bit MMIC phase shifter is 4.2 mm×2.96 mm×0.1 mm
  • Keywords
    III-V semiconductors; MMIC phase shifters; gallium arsenide; 14 dB; 5 bit; 5 to 20 GHz; GaAs; VSWR; insertion loss; multi-octave GaAs MMIC phase shifter; peak phase error; reflection-type topology; sharing Lange coupler; Circuit topology; Costs; Fabrication; Gallium arsenide; Gold; Insertion loss; MESFETs; MMICs; Phase shifters; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000 Asia-Pacific
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6435-X
  • Type

    conf

  • DOI
    10.1109/APMC.2000.926017
  • Filename
    926017