DocumentCode :
3136436
Title :
Characterization of trapping and thermal dispersion in GaN HEMTs
Author :
Albahrani, Sayed ; Parker, Anthony E.
Author_Institution :
Macquarie University, Sydney, Australia
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminal-potential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.
Keywords :
Automatic testing; Gallium nitride; HEMTs; MODFETs; Power dissipation; SPICE; Temperature; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517252
Filename :
5517252
Link To Document :
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