DocumentCode :
3136449
Title :
The design of 1 W 2-stage power amplifier for IMT-2000 application
Author :
Lee, Jonathan Y. ; Han, S.G. ; Lee, Jong Chul ; Kim, Ji H. ; Kim, N.Y. ; Chun, K.I.
Author_Institution :
RFIC Res. & Educ. Center, Kwangwoon Univ., Seoul, South Korea
fYear :
2000
fDate :
2000
Firstpage :
1113
Lastpage :
1116
Abstract :
In this paper, 1 Watt Power amplifier for IMT-2000 application with the discrete type of PHEMT (ATF-34143, 800 μm gate width, Agilent Technologies) and GaAs MESFET (EFA240D-SOT89, 2400 μm gate width, Excelics Semiconductor) is designed and fabricated. The power amplifier has characteristics such as over 30 dBm of P1 dB,OUT (1 dB gain compression output power), 27 dB of linear gain, and 33 dBc of OTP3 (output third order intercept point)
Keywords :
HEMT circuits; III-V semiconductors; MESFET circuits; gallium arsenide; power amplifiers; 1 W; 27 dB; GaAs; GaAs MESFET; IMT-2000; PHEMT; two-stage power amplifier; Dielectric substrates; Educational technology; FETs; Fabrication; Gain; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.926024
Filename :
926024
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3136449
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