• DocumentCode
    3136449
  • Title

    The design of 1 W 2-stage power amplifier for IMT-2000 application

  • Author

    Lee, Jonathan Y. ; Han, S.G. ; Lee, Jong Chul ; Kim, Ji H. ; Kim, N.Y. ; Chun, K.I.

  • Author_Institution
    RFIC Res. & Educ. Center, Kwangwoon Univ., Seoul, South Korea
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1113
  • Lastpage
    1116
  • Abstract
    In this paper, 1 Watt Power amplifier for IMT-2000 application with the discrete type of PHEMT (ATF-34143, 800 μm gate width, Agilent Technologies) and GaAs MESFET (EFA240D-SOT89, 2400 μm gate width, Excelics Semiconductor) is designed and fabricated. The power amplifier has characteristics such as over 30 dBm of P1 dB,OUT (1 dB gain compression output power), 27 dB of linear gain, and 33 dBc of OTP3 (output third order intercept point)
  • Keywords
    HEMT circuits; III-V semiconductors; MESFET circuits; gallium arsenide; power amplifiers; 1 W; 27 dB; GaAs; GaAs MESFET; IMT-2000; PHEMT; two-stage power amplifier; Dielectric substrates; Educational technology; FETs; Fabrication; Gain; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000 Asia-Pacific
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6435-X
  • Type

    conf

  • DOI
    10.1109/APMC.2000.926024
  • Filename
    926024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3136449