Title :
Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications
Author :
Hintermaier, F. ; Hendrix, B. ; Desrochers, D. ; Roeder, J. ; Dehm, C. ; Fritsch, E. ; Honlein, W. ; Mazure, C. ; Nagel, N. ; Thwaite, P. ; Wendt, H. ; Baum, T.H. ; van Buskirk, P. ; Schumacher, M. ; Grossmann, M. ; Lohse, O. ; Waser, R.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles.
Keywords :
MOCVD; MOCVD coatings; adhesion; bismuth compounds; dielectric polarisation; ferroelectric storage; ferroelectric thin films; integrated memory circuits; permittivity; random-access storage; strontium compounds; 0.5 micron; MOCVD deposited film; Pt; Pt surface; SiO/sub 2/; SiO/sub 2/ surface; SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films; SrBi/sub 2/Ta/sub 2/O/sub 9/-Pt; SrBi/sub 2/Ta/sub 2/O/sub 9/-SiO/sub 2/; adhesion; dielectric constants; electrical characterization; endurance; ferroelectric RAM; high density FeRAM applications; low temperature MOCVD process; postanneal process optimization; remanent polarization; run-to-run repeatability; Adhesives; Annealing; Ferroelectric films; Hysteresis; MOCVD; Nonvolatile memory; Polarization; Random access memory; Temperature; Transistors;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689197
