Title :
The design of power amplifier for 5.8 GHz wireless LAN application using GaAs substrate
Author :
Choi, H.K. ; Lee, J.C. ; Lee, B. ; Kim, J.H. ; Kim, N.Y. ; Hong, U.S.
Author_Institution :
RFIC Res. & Educ. Center, Kwangwoon Univ., Seoul, South Korea
Abstract :
This paper describes a compact two-stage hybrid power amplifier for 5.8 GHz-band Wireless Local Area Network (WLAN) applications. The amplifier has been fabricated on high dielectric semiconductor wafer, and then the amplifier has small dimension compared with the conventional hybrid circuits. To fabricate the amplifier, the mask pattern is produced using electron beam lithography. Then the FET, capacitors and resistors are combined with the microstrip line pattern by silver epoxy. The size of the two-stage amplifier is measured to be 2.1 cm×1.4 cm
Keywords :
III-V semiconductors; gallium arsenide; microwave power amplifiers; wireless LAN; 5.8 GHz; GaAs; GaAs substrate; electron beam lithography; high dielectric semiconductor wafer; microstrip line pattern; two-stage hybrid power amplifier; wireless LAN; Capacitors; Circuits; Dielectrics; Electron beams; FETs; Lithography; Power amplifiers; Resistors; Semiconductor optical amplifiers; Wireless LAN;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.926029
