• DocumentCode
    3136511
  • Title

    THz electronics projects at DARPA: Transistors, TMICs, and amplifiers

  • Author

    Albrecht, John D. ; Rosker, Mark J. ; Wallace, H. Bruce ; Tsu-Hsi Chang

  • Author_Institution
    Defense Adv. Res. Projects Agency, Arlington, VA, USA
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1118
  • Lastpage
    1121
  • Abstract
    Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy, and communications applications. Transistors, integration technologies, power amplification, and their precision metrology are the key elements under active investigation. THz InP transistors have been achieved that have enabled the world´s fastest 0.48 THz monolithic integrated circuits. Compact THz high power amplifiers using micro-machined vacuum electronic devices will enable radiation sources at 1.03 THz with 15 GHz of instantaneous bandwidth. Ultimately, low-loss interconnects and integration techniques will couple TMICs with HPAs to enable THz coherent heterodyne transceivers.
  • Keywords
    III-V semiconductors; MIMIC; indium compounds; power amplifiers; submillimetre wave amplifiers; submillimetre wave receivers; submillimetre wave transistors; transceivers; DARPA; InP; TMIC; bandwidth 15 GHz; frequency 0.48 THz; frequency 1.03 THz; low-loss interconnects; micromachined vacuum electronic devices; precision metrology; terahertz coherent heterodyne transceivers; terahertz electronics; terahertz high power amplifiers; terahertz monolithic integrated circuits; terahertz receiver; terahertz transistors; terahertz transmitter; Focusing; Frequency domain analysis; Optical imaging; Portfolios; Radar applications; Radar detection; Radar imaging; Submillimeter wave technology; Transistors; Transmitters; Microwave Monolithic Integrated Circuits; Terahertz; sub-MMW Power Amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517258
  • Filename
    5517258