An analytical MOSFET model for nonlinear circuit simulation

Author

Grebennikov, Andrei ; Lin, Fujiang

Author_Institution

IME, Singapore

fYear

2000

fDate

2000

Firstpage

1158

Lastpage

1162

Abstract

An analytical large-signal model for silicon MOSFETs is presented based on the well-founded small-signal equivalent circuit, including self-heating effect and charge conservation condition. The proposed new single continuously differentiable empirical equation is constructed in such a way that it can be easily and straightforward extracted from measured data. The presented model is a good compromise between the simplicity of numerical calculations and the accuracy of final results which is desired by the circuit designer in nonlinear circuit simulation

Keywords

MOSFET; UHF field effect transistors; circuit simulation; elemental semiconductors; equivalent circuits; microwave field effect transistors; nonlinear network analysis; semiconductor device models; silicon; MOSFET nonlinear model; Si; Si MOSFETs; analytical large-signal model; charge conservation; continuously differentiable empirical equation; microwave CAD tools; nonlinear circuit simulation; self-heating effect; small-signal equivalent circuit; Accuracy; Analytical models; Circuit simulation; Data mining; Differential equations; Equivalent circuits; MOSFET circuits; Nonlinear circuits; Nonlinear equations; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926036

Filename

926036