Title :
Self-organization phenomenon of strained InGaAs grown on InP (311) substrates by metalorganic vapor phase epitaxy
Author :
Temmyo, Jiro ; Kozen, Atsuo ; Tamamura, Toshiaki ; Nötzel, Richard ; Fukui, Takashi ; Hasegawa, Hideki
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We have found a self-organization phenomenon in strained InGaAs on an InP (311) substrate occurs during growth interruption in MOVPE growth. This phenomenon is similar to those that occur in the material system of InGaAs on GaAs (311). This suggests that the natural formation of nanostructures due to self-organization phenomena of strained layers on high Miller-index planes of III-V compound semiconductors by vapor phase epitaxy is a rather common feature
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; surface structure; vapour phase epitaxial growth; AFM images; InGaAs; InP; InP (311) substrates; MOVPE growth; growth interruption; high Miller-index planes; metalorganic vapor phase epitaxy; nanostructures; self-organization phenomenon; strained InGaAs; strained layers; surface morphology; Atomic force microscopy; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Microstructure; Substrates; Surface morphology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522256
