DocumentCode
3136871
Title
Quantum cascade lasers: unipolar intersubband infrared lasers
Author
Capasso, F. ; Faist, J. ; Sirtori, C. ; Hutchinson, A.L. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1995
fDate
9-13 May 1995
Firstpage
770
Lastpage
772
Abstract
The quantum cascade laser relies on only one type of carrier (unipolar laser) and on quantum jumps of electrons between discrete conduction band energy levels of quantum wells. We designed a structure where electrons make a vertical radiative transition essentially in the same well. This reduces considerably the width of the gain spectrum (FWHM=10 meV) and therefore the laser threshold current density. To prevent electron escape in the continuum, which is greatly reduced in the case of the diagonal transition, the superlattice of the digitally graded injector is designed to act as a Bragg reflector for electrons in the higher excited state and to simultaneously ensure swift electron escape from the lower states via a miniband facing the latter
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; AlInAs-GaInAs; AlInAs/GaInAs structure; conduction band energy levels; digitally graded injector superlattice; electron Bragg reflector; electron quantum jumps; gain spectrum width reduction; laser threshold current density; miniband; pulsed operation; quantum cascade laser; swift electron escape; unipolar intersubband infrared lasers; vertical radiative transition; Electrons; Laser modes; Laser transitions; Optical coupling; Optical scattering; Optical sensors; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522257
Filename
522257
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