Novel current-blocking laser structures using directly-bonded InP-SiO2-InP

We propose a novel laser structure which uses a SiO₂ insulator sandwiched with InP as a current blocking layer. The structure has been successfully fabricated by directly bonding InP to SiO₂ . A threshold current density of 1.9 kA/cm² acid a maximum output power of 60 mW have been achieved for a 1.3-μm InGaAsP laser with a bulk active layer and a 300-μm cavity. This result implies that the leakage current is negligible. The parasitic capacitance has been measured to be 31 pF even for a laser with an area of 300 μm×300 μm