Title :
Novel current-blocking laser structures using directly-bonded InP-SiO2-InP
Author :
Wada, H. ; Ogawa, Y. ; Kamijoh, T.
Author_Institution :
Semicond. Technol. Lab., OKI Electr. Ind., Tokyo, Japan
Abstract :
We propose a novel laser structure which uses a SiO2 insulator sandwiched with InP as a current blocking layer. The structure has been successfully fabricated by directly bonding InP to SiO2 . A threshold current density of 1.9 kA/cm2 acid a maximum output power of 60 mW have been achieved for a 1.3-μm InGaAsP laser with a bulk active layer and a 300-μm cavity. This result implies that the leakage current is negligible. The parasitic capacitance has been measured to be 31 pF even for a laser with an area of 300 μm×300 μm
Keywords :
III-V semiconductors; capacitance; current density; indium compounds; leakage currents; semiconductor lasers; silicon compounds; wafer bonding; 1.3 mum; 300 mum; 31 pF; 60 mW; InP-SiO2-InP; SiO2 insulator; bulk active layer; cavity; current-blocking laser structures; direct wafer bonding; directly-bonded InP-SiO2-InP; leakage current; maximum output power; parasitic capacitance; threshold current density; Area measurement; Bonding; Capacitance measurement; Indium phosphide; Insulation; Leakage current; Parasitic capacitance; Power generation; Power lasers; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522259
