DocumentCode :
3136940
Title :
Improving the Time Response of MEMS Switches for RF Applications
Author :
El-Asmar, M. ; Hariri, Y. ; Domingue, F. ; Nerguizian, V.
Author_Institution :
Ecole de Technol. Superieure, Montreal, Que.
fYear :
2006
fDate :
38838
Firstpage :
344
Lastpage :
347
Abstract :
In this paper, we present the latest development and aspects regarding the mechanical as well as electrical modeling and design of shunt MEMS switches. The general equations of the spring constant, electrostatic voltage, quality factor and the damping coefficient are investigated in order to improve the time response of the membrane. Finally, a rapid shunt MEMS switch has been designed with a time response better than one microsecond. All design steps are also presented with numerical analysis support and mechanical and electrical simulations. The device is fabricated and measurements are performed to determine the performance of the fabricated switch. At the end of this paper, we discuss and conclude the results of this work
Keywords :
microswitches; microwave switches; RF application; damping coefficient; electrical modeling; electrostatic voltage; fabricated MEMS switch; numerical analysis; quality factor; spring constant; time response; Electrostatics; Equations; Microswitches; Q factor; Radio frequency; Shunt (electrical); Springs; Switches; Time factors; Voltage; MEMS; layers; membrane; microwave; switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2006. CCECE '06. Canadian Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0038-4
Electronic_ISBN :
1-4244-0038-4
Type :
conf
DOI :
10.1109/CCECE.2006.277729
Filename :
4054694
Link To Document :
بازگشت