MMIC lumped and transversal filters with Si technology

Author

Rosario, Maria Joao Do ; Vaz, J. Caldinhas ; Freire, J Costa

Author_Institution

Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal

fYear

2000

fDate

2000

Firstpage

1322

Lastpage

1325

Abstract

This paper describes the design and main characteristics of MMIC band pass active filters for L band. The circuits are based on the lumped and transversal concept and are implemented with standard 0.8 μm BiCMOS process. The filters present transmission zeros close to the centre frequency to achieve a high selectivity and small bandwidth. A 3 dB bandwidth of 6% centred at 1.7 GHz and a side band rejection of 24 dB at ±300 MHz were the best results obtained. The circuits are biased from a 3 V power supply to be included on mobile terminals. Comparison with similar filters on GaAs is presented. Their advantages and drawbacks are discussed

Keywords

BiCMOS analogue integrated circuits; MMIC; active filters; band-pass filters; microwave filters; 0.8 micron; 1.7 GHz; 3 V; BiCMOS process; L-band; MMIC band pass active filter; Si; bandwidth; lumped filter; mobile terminal; selectivity; side band rejection; silicon technology; transmission zero; transversal filter; Active filters; Band pass filters; Bandwidth; BiCMOS integrated circuits; Filtering theory; Frequency; Gallium arsenide; MMICs; Power supplies; Transversal filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926078

Filename

926078