DocumentCode :
3137145
Title :
MMIC lumped and transversal filters with Si technology
Author :
Rosario, Maria Joao Do ; Vaz, J. Caldinhas ; Freire, J Costa
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
fYear :
2000
fDate :
2000
Firstpage :
1322
Lastpage :
1325
Abstract :
This paper describes the design and main characteristics of MMIC band pass active filters for L band. The circuits are based on the lumped and transversal concept and are implemented with standard 0.8 μm BiCMOS process. The filters present transmission zeros close to the centre frequency to achieve a high selectivity and small bandwidth. A 3 dB bandwidth of 6% centred at 1.7 GHz and a side band rejection of 24 dB at ±300 MHz were the best results obtained. The circuits are biased from a 3 V power supply to be included on mobile terminals. Comparison with similar filters on GaAs is presented. Their advantages and drawbacks are discussed
Keywords :
BiCMOS analogue integrated circuits; MMIC; active filters; band-pass filters; microwave filters; 0.8 micron; 1.7 GHz; 3 V; BiCMOS process; L-band; MMIC band pass active filter; Si; bandwidth; lumped filter; mobile terminal; selectivity; side band rejection; silicon technology; transmission zero; transversal filter; Active filters; Band pass filters; Bandwidth; BiCMOS integrated circuits; Filtering theory; Frequency; Gallium arsenide; MMICs; Power supplies; Transversal filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
Type :
conf
DOI :
10.1109/APMC.2000.926078
Filename :
926078
Link To Document :
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