Title :
Free-orientation integration by direct bonding: fabrication of (001) InP-based 1.55 μm-wavelength lasers on (110) GaAs substrate
Author :
Okuno, Y. ; Aoki, M. ; Tsuchiya, T. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
We propose a new concept “free-orientation integration”, which should be implemented by the direct bonding technique. In order to investigate the possibility of such integration, we examine the direct bonding of (001) InP and (110) GaAs. Cross-sectional observation shows that these wafers can be united without generating dislocation. (001) InP-based 1.55-μm wavelength lasers are fabricated on (110) GaAs. The light-current characteristics of the lasers are almost identical to those of lasers fabricated on (001) GaAs, while the turn-on voltage is higher by about 0.4 V, due to the large band discontinuity at the bonding interface. The results show that device fabrication by direct bonding on different materials with different surface orientations is possible with satisfactory quality
Keywords :
III-V semiconductors; dangling bonds; indium compounds; integrated optoelectronics; laser transitions; quantum well lasers; wafer bonding; (001) InP-based 1.55 μm-wavelength lasers; (110) GaAs; (110) GaAs substrate; 1.55 mum; GaAs; InP; bonding interface; cross-sectional observation; direct bonding; fabrication; free-orientation integration; large band discontinuity; light-current characteristics; surface orientations; turn-on voltage; Crystalline materials; Crystallography; Epitaxial growth; Gallium arsenide; Indium phosphide; Lattices; Monolithic integrated circuits; Optical device fabrication; Substrates; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522261
