• DocumentCode
    3137530
  • Title

    Random lasing from ZnO nanowires system

  • Author

    Yang, Hui Ying ; Yu, Siu Fung ; Lau, Shu Ping ; Yan, Bin ; Ting Yu

  • Author_Institution
    Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2009
  • fDate
    13-17 July 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report high temperature ultraviolet random lasing from 3D ZnO nanowires system. Lasing occurs above an excitation threshold of 0.35 MW/cm2 at room temperature. The characteristic temperature of the ZnO nanoneedle lasers was derived to be 89 K in the temperature range from 300 to 550 K.
  • Keywords
    II-VI semiconductors; nanowires; random processes; semiconductor lasers; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; 3D zinc oxide nanowire system; ZnO; characteristic temperature; excitation threshold; temperature 293 K to 298 K; temperature 300 K to 550 K; ultraviolet random lasing; zinc oxide nanoneedle laser; Furnaces; Laser excitation; Nanowires; Optical feedback; Optical pumping; Plasma temperature; Substrates; Temperature dependence; Temperature distribution; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-4102-0
  • Electronic_ISBN
    978-1-4244-4103-7
  • Type

    conf

  • DOI
    10.1109/OECC.2009.5222627
  • Filename
    5222627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3137530