DocumentCode :
3137530
Title :
Random lasing from ZnO nanowires system
Author :
Yang, Hui Ying ; Yu, Siu Fung ; Lau, Shu Ping ; Yan, Bin ; Ting Yu
Author_Institution :
Nanyang Technol. Univ., Singapore, Singapore
fYear :
2009
fDate :
13-17 July 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report high temperature ultraviolet random lasing from 3D ZnO nanowires system. Lasing occurs above an excitation threshold of 0.35 MW/cm2 at room temperature. The characteristic temperature of the ZnO nanoneedle lasers was derived to be 89 K in the temperature range from 300 to 550 K.
Keywords :
II-VI semiconductors; nanowires; random processes; semiconductor lasers; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; 3D zinc oxide nanowire system; ZnO; characteristic temperature; excitation threshold; temperature 293 K to 298 K; temperature 300 K to 550 K; ultraviolet random lasing; zinc oxide nanoneedle laser; Furnaces; Laser excitation; Nanowires; Optical feedback; Optical pumping; Plasma temperature; Substrates; Temperature dependence; Temperature distribution; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
Type :
conf
DOI :
10.1109/OECC.2009.5222627
Filename :
5222627
Link To Document :
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