Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED´s produced 2 mW average power at 3.7 μm and 80 K and 0.1 mW at 4.3 μm and 300 K. A multistage, 3.8-3.9 μm laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers