Title :
GSMBE growth of InGaAsP with an “on site” arsine generator
Author :
Gentner, J.L. ; Labrune, P. ; Pinquier, A. ; Parent, J.-C.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
A prototype electrochemical arsine generator fitted with a special hydrogen separation stage has been demonstrated for the first time to solve the medium/long term arsine concentration stability problem experienced previously. The ability to stabilize the arsine concentration at a value higher than 99.5% has been proven by the reproducible growth of lattice matched InGaAsP and compressively strained InGaAsP MQW layers. The quality of the InP/InGaAsP layers grown with electrochemically generated arsine has been demonstrated to be comparable to the same layers grown with pure cylinder arsine. Such a hydride generator is particularly well adapted to GSMBE because of the low hydride consumption and because the growth chemistry being unchanged, the generator is directly compatible with existing calibrations and processes
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; GSMBE growth; InGaAsP; InP-InGaAsP; InP/InGaAsP layers; arsine concentration stability problem; compressively strained InGaAsP MQW layers; electrochemical arsine generator; growth chemistry; lattice matched InGaAsP; low hydride consumption; on site arsine generator; quality; reproducible growth; special hydrogen separation stage; Air safety; Biomembranes; Electronics industry; Epitaxial growth; Epitaxial layers; Gases; Hydrogen; Protons; Purification; Stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522263