Title :
Femtosecond semiconductor optoelectronic devices for ultrahigh throughput optical communications systems
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba
Abstract :
Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; optical communication equipment; optical switches; semiconductor lasers; 1 to 10 Tbit/s; InP; all-optical switch; femtosecond semiconductor optoelectronic device; signal processing; throughput; ultrafast optical communication network; ultrashort pulse laser; Optical devices; Optical fiber communication; Optical signal processing; Optical wavelength conversion; Optoelectronic devices; Semiconductor lasers; Space technology; Throughput; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791583