Title :
Silicon on insulator technology, devices, and challenges
Author :
Cristoloveanu, Sorin
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
SOI technologies are reviewed in terms of wafer fabrication, device properties, and development challenges. The basic SOI assets for the microelectronics future are discussed and compared to those of bulk-silicon technology. There are two types of SOI MOSFETs-fully-depleted and partially-depleted-each governed by special mechanisms which will be briefly addressed
Keywords :
MOSFET; silicon-on-insulator; SOI technology; Si; fully-depleted SOI MOSFET; microelectronic device; partially-depleted SOI MOSFET; wafer fabrication; Circuits; Fabrication; Image segmentation; MOSFETs; Microelectronics; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Wafer bonding;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791584
