DocumentCode
3137599
Title
Silicon on insulator technology, devices, and challenges
Author
Cristoloveanu, Sorin
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fYear
1999
fDate
1999
Firstpage
44
Lastpage
48
Abstract
SOI technologies are reviewed in terms of wafer fabrication, device properties, and development challenges. The basic SOI assets for the microelectronics future are discussed and compared to those of bulk-silicon technology. There are two types of SOI MOSFETs-fully-depleted and partially-depleted-each governed by special mechanisms which will be briefly addressed
Keywords
MOSFET; silicon-on-insulator; SOI technology; Si; fully-depleted SOI MOSFET; microelectronic device; partially-depleted SOI MOSFET; wafer fabrication; Circuits; Fabrication; Image segmentation; MOSFETs; Microelectronics; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791584
Filename
791584
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