Title :
Strain-compensated InGaAs/InAlAs quantum-cascade lasers
Author :
Feng-Qi, Liu ; Zhanguo, Wang ; Lu, Li ; Lijun, Wang ; Junqi, Liu
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
Abstract :
Molecular beam epitaxy (MBE) growth of strain-compensated InGaAs/InAlAs quantum cascade lasers is reported. Accurate control of material composition, growth rate, doping level and interface quality can be realized by optimizing growth conditions.
Keywords :
aluminium compounds; doping profiles; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; semiconductor doping; semiconductor growth; InGaAs-InAlAs; doping level; growth conditions; interface quality; material composition; molecular beam epitaxy; quantum cascade lasers; strain compensation; Chemical lasers; Conducting materials; Doping; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum cascade lasers; Substrates; Temperature;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5222630
