DocumentCode
3137600
Title
Strain-compensated InGaAs/InAlAs quantum-cascade lasers
Author
Feng-Qi, Liu ; Zhanguo, Wang ; Lu, Li ; Lijun, Wang ; Junqi, Liu
Author_Institution
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
fYear
2009
fDate
13-17 July 2009
Firstpage
1
Lastpage
2
Abstract
Molecular beam epitaxy (MBE) growth of strain-compensated InGaAs/InAlAs quantum cascade lasers is reported. Accurate control of material composition, growth rate, doping level and interface quality can be realized by optimizing growth conditions.
Keywords
aluminium compounds; doping profiles; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; semiconductor doping; semiconductor growth; InGaAs-InAlAs; doping level; growth conditions; interface quality; material composition; molecular beam epitaxy; quantum cascade lasers; strain compensation; Chemical lasers; Conducting materials; Doping; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum cascade lasers; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-4102-0
Electronic_ISBN
978-1-4244-4103-7
Type
conf
DOI
10.1109/OECC.2009.5222630
Filename
5222630
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