Gallium nitride based electronics and opto-electronics

Author

Mishra, Umesh K. ; DenBaars, Steven P.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1999

fDate

1999

Firstpage

73

Lastpage

79

Abstract

The benefit provided by optoelectronic applications of gallium nitride is immeasurable and, contrary to electronics applications, it provides an unique solution not merely a better one. This is because of the wide range of tunable and direct band gaps available in the (Al,Ga,In)N family from the deep UV (AlN; 6.2 eV) to values commensurate with metals when including the mixed arsenide nitride system. The impact of InGaN/GaN based LEDs for blue and green emitters has already been enormous (over a $250 million market in 1998) and the promise of nitride based lasers DVD applications is phenomenal. Within this context, in this paper, recent progress in microwave AlGaN/GaN HEMTs and AlGaN/InGaN blue lasers at UCSB on sapphire is presented

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; integrated optoelectronics; light emitting diodes; semiconductor lasers; wide band gap semiconductors; AlGaN/InGaN blue lasers; GaAlN; GaN; electronics; microwave AlGaN/GaN HEMTs; opto-electronics; Aluminum gallium nitride; Consumer electronics; DVD; Gallium nitride; III-V semiconductor materials; Laser applications; Light emitting diodes; Masers; Photonic band gap; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791588

Filename

791588