Title :
Gallium nitride based electronics and opto-electronics
Author :
Mishra, Umesh K. ; DenBaars, Steven P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The benefit provided by optoelectronic applications of gallium nitride is immeasurable and, contrary to electronics applications, it provides an unique solution not merely a better one. This is because of the wide range of tunable and direct band gaps available in the (Al,Ga,In)N family from the deep UV (AlN; 6.2 eV) to values commensurate with metals when including the mixed arsenide nitride system. The impact of InGaN/GaN based LEDs for blue and green emitters has already been enormous (over a $250 million market in 1998) and the promise of nitride based lasers DVD applications is phenomenal. Within this context, in this paper, recent progress in microwave AlGaN/GaN HEMTs and AlGaN/InGaN blue lasers at UCSB on sapphire is presented
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; integrated optoelectronics; light emitting diodes; semiconductor lasers; wide band gap semiconductors; AlGaN/InGaN blue lasers; GaAlN; GaN; electronics; microwave AlGaN/GaN HEMTs; opto-electronics; Aluminum gallium nitride; Consumer electronics; DVD; Gallium nitride; III-V semiconductor materials; Laser applications; Light emitting diodes; Masers; Photonic band gap; Tunable circuits and devices;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791588
