Title :
Compact modeling of high-frequency, small-dimension bipolar transistors
Author :
Pulfrey, D.L. ; St.Denis, A.R. ; Vaidyanathan, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada
Abstract :
Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters
Keywords :
Boltzmann equation; bipolar transistors; semiconductor device models; Boltzmann transport equation; compact model; drift-diffusion equation; high-frequency bipolar transistor; high-speed device; maximum oscillation frequency; quasi-ballistic transport; small-dimension BJT; Arthritis; Ballistic transport; Bipolar transistors; Boltzmann equation; Effective mass; Electrons; Frequency; Heterojunctions; Integral equations; Prototypes;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791590
