Title :
GaN nanorod-based subwavelength optical media
Author :
Chen, H.-Y. ; Lin, H.-W. ; Yang, Y.-C. ; Wu, C.-Y. ; Chen, W.-C. ; Chen, J.-S. ; Gwo, S.
Author_Institution :
Dept. of Phys., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
Vertically self-aligned gallium nitride nanorod arrays grown by plasma-assisted molecular-beam epitaxy are shown to behave as subwavelength optical media in both their discrete and integrated forms, which have important implications for optoelectronic applications.
Keywords :
III-V semiconductors; gallium compounds; molecular beam epitaxial growth; nanostructured materials; optical materials; plasma materials processing; wide band gap semiconductors; GaN; nanorod arrays; nanorod-based subwavelength optical media; optoelectronic applications; plasma-assisted molecular-beam epitaxy; Anisotropic magnetoresistance; Gallium nitride; Geometrical optics; III-V semiconductor materials; Light emitting diodes; Optical arrays; Optical polarization; Optical refraction; Optical variables control; Refractive index;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5222639
