Title :
Heterostructure II-VI materials and devices for infrared imaging
Author :
Ashokan, R. ; Sivananthan, S.
Author_Institution :
Dept. of Phys., Illinois Univ., Chicago, IL, USA
Abstract :
The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated
Keywords :
II-VI semiconductors; cadmium compounds; infrared imaging; mercury compounds; molecular beam epitaxial growth; semiconductor heterojunctions; CdTe; HgCdTe-CdTe-Si; HgCdTe-CdZnTe; II-VI material; double layer planar heterostructure device; fabrication; infrared imaging; molecular beam epitaxy; substrate orientation; Doping; Epitaxial growth; Fabrication; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Optical imaging; Sensor arrays; Silicon; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791591
