Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode

Author

Ohtake, H. ; Hirano, Y. ; Saito, N. ; Sato, F. ; Abe, M. ; Sawada, K. ; Ando, T.

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

fYear

1999

fDate

1999

Firstpage

98

Lastpage

101

Abstract

Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 Ω·cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer

Keywords

amorphous semiconductors; avalanche photodiodes; elemental semiconductors; hydrogen; plasma CVD coatings; silicon; silicon compounds; SiC:H-Si:H-Si; amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode; avalanche photocurrent multiplication; electron cyclotron resonance plasma enhanced chemical vapor deposition; Amorphous materials; Conductivity; Crystallization; Cyclotrons; Electrons; Heterojunctions; Photoconductivity; Photodiodes; Plasma chemistry; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791592

Filename

791592