Title :
Avalanche photocurrent multiplication in an amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode
Author :
Ohtake, H. ; Hirano, Y. ; Saito, N. ; Sato, F. ; Abe, M. ; Sawada, K. ; Ando, T.
Author_Institution :
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
Abstract :
Photocurrent multiplication in amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiodes was studied, which were fabricated on n-type crystalline Si substrates with different resistivities using an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Photocurrent multiplication was observed only in the sample of resistivity of 0.4 Ω·cm. The dependence on the incident light wavelength suggests that the photocurrent increase was caused by the avalanche multiplication in the amorphous Si:H layer
Keywords :
amorphous semiconductors; avalanche photodiodes; elemental semiconductors; hydrogen; plasma CVD coatings; silicon; silicon compounds; SiC:H-Si:H-Si; amorphous SiC:H/amorphous Si:H/crystalline Si heterojunction photodiode; avalanche photocurrent multiplication; electron cyclotron resonance plasma enhanced chemical vapor deposition; Amorphous materials; Conductivity; Crystallization; Cyclotrons; Electrons; Heterojunctions; Photoconductivity; Photodiodes; Plasma chemistry; Resonance;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791592
