• DocumentCode
    3137811
  • Title

    Arsenic incorporation in InGaAs grown by MBE at low temperatures under atomic hydrogen irradiation

  • Author

    Goh, S.C. ; Usher, B.F. ; Warminski, T.

  • Author_Institution
    Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    The minimum V/III flux ratios for stoichiometric growth of In0.4Ga0.6As on GaAs have been measured from 250 to 500°C. It is found that atomic hydrogen interacts strongly with surface As above a threshold temperature of about 300°C and the maintenance of stoichiometric growth above these temperatures requires a significant increase in the As flux to the growth surface
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; radiation effects; semiconductor epitaxial layers; semiconductor growth; stoichiometry; 250 to 500 C; H; In0.4Ga0.6As; atomic hydrogen irradiation; low temperature MBE; stoichiometric growth; Atomic measurements; Gallium arsenide; Hydrogen; Indium gallium arsenide; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Semiconductor materials; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791593
  • Filename
    791593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3137811