Title :
Arsenic incorporation in InGaAs grown by MBE at low temperatures under atomic hydrogen irradiation
Author :
Goh, S.C. ; Usher, B.F. ; Warminski, T.
Author_Institution :
Dept. of Electron. Eng., La Trobe Univ., Bundoora, Vic., Australia
Abstract :
The minimum V/III flux ratios for stoichiometric growth of In0.4Ga0.6As on GaAs have been measured from 250 to 500°C. It is found that atomic hydrogen interacts strongly with surface As above a threshold temperature of about 300°C and the maintenance of stoichiometric growth above these temperatures requires a significant increase in the As flux to the growth surface
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; radiation effects; semiconductor epitaxial layers; semiconductor growth; stoichiometry; 250 to 500 C; H; In0.4Ga0.6As; atomic hydrogen irradiation; low temperature MBE; stoichiometric growth; Atomic measurements; Gallium arsenide; Hydrogen; Indium gallium arsenide; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Semiconductor materials; Substrates; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791593
