Title :
Reduction of threshold current density in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions
Author :
Huang, W. ; Jain, F.
Author_Institution :
Dept. of Electr. Eng., Bucknell Univ., Lewisburg, PA, USA
Abstract :
This paper presents computations showing the effect of excitonic transitions in reducing the threshold current density Jth in the presence of a large dislocation density in InGaN-AlGaN quantum wire and dot lasers. The effect of reduction in lateral and transverse dimensions on the threshold current density is also shown. A comparison of the computed values of Jth for quantum wire and dot lasers with experimental data on InGaN-AlGaN quantum well lasers, as reported by Nakamura et al., is also presented
Keywords :
III-V semiconductors; aluminium compounds; current density; dislocation density; excitons; gallium compounds; indium compounds; interface states; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum dots; semiconductor quantum wires; wide band gap semiconductors; InGaN-AlGaN; InGaN-AlGaN quantum dot lasers; InGaN-AlGaN quantum wire lasers; excitonic transitions; large dislocation density; lateral dimensions; threshold current density; transverse dimensions; Absorption; Excitons; Laser transitions; Quantum computing; Quantum dot lasers; Quantum dots; Quantum well lasers; Threshold current; US Department of Transportation; Wire;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791595
