Title :
InP-based heterojunction FET processing for high-reliability millimeter-wave applications
Author :
Kuzuhara, Masaaki ; Onda, Kazuhiko ; Fujihara, Akira ; Mizuki, Emiko ; Hori, Yasuko ; Miyamoto, Hironobu
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
Describes a novel InP-based FET processing technology for high-reliability microwave applications. High performance InAlAs/InGaAs heterojunction FETs (HJFETs) were fabricated using completely molybdenum-based electrode technology (COMET). The fabricated 1 μm gate-length COMET-HJFET exhibited excellent DC and RF performance, including a transconductance of 470 mS/mm and a current gain cutoff frequency of 40 GHz. High temperature DC bias tests performed on the COMET device demonstrated improved reliability compared to that for the conventional InP-based HJFET. The superior reliability of the developed COMET-HJFET is attributed to the reduced interdiffusion between metals of the electrodes and semiconductors by introducing a refractory metal of Mo as a barrier metal
Keywords :
III-V semiconductors; Schottky diodes; diffusion barriers; indium compounds; junction gate field effect transistors; millimetre wave field effect transistors; ohmic contacts; semiconductor device reliability; semiconductor technology; 1 mum; 40 GHz; 470 mS; COMET; DC performance; HJFET; InP; InP-based heterojunction FET processing; Mo; RF performance; barrier metal; completely molybdenum-based electrode technology; current gain cutoff frequency; electrodes; high performance InAlAs/InGaAs heterojunction FET; high temperature DC bias tests; high-reliability millimeter-wave applications; metals; reduced interdiffusion; refractory metal; semiconductors; transconductance; Cutoff frequency; Electrodes; Heterojunctions; Indium compounds; Indium gallium arsenide; Microwave FETs; Microwave technology; Performance gain; Radio frequency; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522267
