Title :
Nonlinear optical properties of ion-implanted GaAs
Author :
Lodeer, M.J. ; Luther-Davies, B. ; Tan, H.H. ; Jagadish, C. ; Haimi, M. ; Siegner, U. ; Keller, U. ; Zou, J.
Author_Institution :
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken
Keywords :
III-V semiconductors; arsenic; gallium arsenide; ion implantation; nonlinear optics; optical modulation; optical saturable absorption; oxygen; 400 fs; GaAs:As; GaAs:O; annealing conditions; doses; ion-implanted GaAs; nonlinear optical properties; response times; Annealing; Australia; Delay; Gallium arsenide; Nonlinear optics; Optical modulation; Pulse modulation; Reflectivity; Temperature; Ultrafast optics;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791606
