Nonlinear optical properties of ion-implanted GaAs

Author

Lodeer, M.J. ; Luther-Davies, B. ; Tan, H.H. ; Jagadish, C. ; Haimi, M. ; Siegner, U. ; Keller, U. ; Zou, J.

Author_Institution

Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1999

fDate

1999

Firstpage

151

Lastpage

153

Abstract

We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken

Keywords

III-V semiconductors; arsenic; gallium arsenide; ion implantation; nonlinear optics; optical modulation; optical saturable absorption; oxygen; 400 fs; GaAs:As; GaAs:O; annealing conditions; doses; ion-implanted GaAs; nonlinear optical properties; response times; Annealing; Australia; Delay; Gallium arsenide; Nonlinear optics; Optical modulation; Pulse modulation; Reflectivity; Temperature; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791606

Filename

791606