Title :
Unpinning of Fermi level at InP Schottky diode interfaces produced by novel in situ electrochemical process
Author :
Wu, N.-J. ; Hashizume, T. ; Hasegawa, H. ; Amemiya, Y.
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
The paper demonstrates that the pinning of the Fermi level can be removed at InP metal-semiconductor interfaces produced by the novel in situ electrochemical process. The process consists of anodic etching of InP and subsequent cathodic deposition of metal, both of which are done in situ in the same electrolyte. InP Schottky diodes with various metals (Ag, Sn, Cu, Co, Pd, Ni and Pt) have been formed by using different electrolytes based on chloric or sulfuric acid and containing barrier metal ions. The diodes exhibited nearly thermionic emission characteristics. SBH changed over a wide range from 0.35 eV to 0.86 eV. The Pt/InP diodes gave the highest SBH of 0.86eV which is the highest value ever reported for an intimate metal contact to InP
Keywords :
Fermi level; III-V semiconductors; Schottky diodes; electrodeposition; etching; indium compounds; interface states; semiconductor technology; 0.35 to 0.86 eV; Fermi level unpinning; InP Schottky diode interfaces; InP metal-semiconductor interfaces; InP-Ag; InP-Co; InP-Cu; InP-Ni; InP-Pd; InP-Pt; InP-Sn; Pt/InP diodes; anodic etching; barrier metal ions; cathodic deposition; chloric acid; electrolytes; in situ electrochemical process; intimate metal contact; nearly thermionic emission characteristics; sulfuric acid; Electrochemical processes; Electrodes; Etching; Gallium arsenide; Indium phosphide; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522268
