Title :
Cadmium sulfide surface stabilization and Schottky barrier enhancement for InP based optoelectronic devices
Author :
Vaccaro, K. ; Spaziani, S.M. ; Davis, A. ; Dauplaise, H.M. ; Martin, E.A. ; Lorenzo, J.P.
Author_Institution :
USAF Rome Lab., Hanscom AFB, MA, USA
Abstract :
We have investigated the use of CdS interlayers grown by chemical bath deposition (CBD). We have deposited CdS on a wide variety of III-V semiconductors. We found that native oxides were reduced by the CdS treatment. CdS-treated and untreated HEMTs and metal-semiconductor-metal photodetectors (MSMs) were compared. Thin 50 Å layers were effective in reducing gate and surface leakage. The thin CdS layers reduced the gate leakage of InA1As/InGaAs HEMTs and the dark current of InA1As/InGaAs optical detectors. X-ray photoelectron spectroscopy indicates a reduction of surface oxides and the prevention of subsequent group III or V oxide formation. Backside processing of InGaAs/lnA1As MSMs allows complete coverage of the mesas. The CBD process for depositing CdS is inherently adaptable to a wide range of optoelectronic device processes
Keywords :
II-VI semiconductors; III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; aluminium compounds; cadmium compounds; dark conductivity; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; metal-semiconductor-metal structures; oxidation; photodetectors; surface treatment; 50 angstrom; CdS; CdS interlayers; CdS surface stabilization; CdS treatment; CdS-treated HEMT; III-V semiconductors; InA1As/InGaAs HEMTs; InA1As/InGaAs optical detectors; InAlAs-InGaAs; InP based optoelectronic devices; Schottky barrier enhancement; X-ray photoelectron spectroscopy; backside processing; chemical bath deposition; dark current; gate leakage; mesas; metal-semiconductor-metal photodetectors; native oxides; optoelectronic device processes; surface leakage; untreated HEMT; Cadmium compounds; Chemicals; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Leakage current; MODFETs; Photodetectors; Schottky barriers; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522269
