• DocumentCode
    3138111
  • Title

    Distribution and chemical bonding of N at NO nitrided SiC/SiO2 interface

  • Author

    Li, Hui-feng ; Dimitrijev, Sima ; Sweatman, Denis ; Harrison, H.Barry ; Tanner, Phillip

  • Author_Institution
    Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    164
  • Lastpage
    166
  • Abstract
    This paper presents results of the physical characterization of NO nitrided SiC/SiO2 interfaces by XPS analysis. The results show different interface chemistries between NO nitrided and Ar annealed SiC/SiO2 interfaces. After NO nitridation, N builds up at the SiC/SiO2 interface forming Si≡N bonds. The NO nitrided SiC/SiO2 interface is free of the complex interface oxide/carbon compounds which are suggested to be the reason for the inferiority of the SiC/SiO2 interface compared to the Si/SiO 2 interface
  • Keywords
    X-ray photoelectron spectra; bonds (chemical); nitridation; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N distribution; NO; NO nitridation; SiC-SiO2; SiC/SiO2 interface; XPS; chemical bonding; Annealing; Argon; Bonding; Chemicals; Hydrogen; Nitrogen; Oxidation; Performance analysis; Silicon carbide; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791610
  • Filename
    791610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3138111