DocumentCode :
31382
Title :
Analytical Modeling of Industrial-Related Silicon Solar Cells
Author :
Fellmeth, Tobias ; Clement, Florian ; Biro, Daniel
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst. ISE, Freiburg, Germany
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
504
Lastpage :
513
Abstract :
Fast and accurate simulation tools are key to increasing our understanding of silicon-based solar cells. A lucid graphical unit interface and experimentally obtained input parameters help make these tools accessible for a wide range of users. In this paper, we present a fast Excel tool based on the well-known two-diode model supporting conventional and metal-wrap-through cell architectures. The selective emitter approach, spatial varying emitter recombination, and optical simulations are taken into account. A set of consistent input parameters, including the emitter recombination in the passivated case, as well as the metal contacted for both idealities, are given as a function of the emitter sheet resistance. This set on input parameters is associated with industrial-related technologies for conventional and metal-wrap-through silicon solar cells.
Keywords :
electron-hole recombination; elemental semiconductors; semiconductor diodes; silicon; solar cells; Excel tool; Si; industrial-related silicon solar cells; lucid graphical unit interface; metal-wrap-through cell architectures; optical simulations; passivated case; selective emitter; spatial varying emitter recombination; two-diode model; Charge carriers; Frequency modulation; Mathematical model; Metals; Photovoltaic cells; Resistance; Silicon; Emitter; metal wrap through (MWT); modeling; solar cell;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2281105
Filename :
6615920
Link To Document :
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