Use of advanced analytical techniques for VLSI failure analysis

Author

Banerjee, Lndrajit ; Tracy, Bryan ; Davies, Paul ; McDonald, Bob

Author_Institution

INTEL Corp., Santa Clara, CA, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

61

Lastpage

68

Abstract

Several new applications and techniques in the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), focused ion beam (FIB) microsurgery, and secondary ion mass spectroscopy (SIMS) for problem solving are presented. These tools, used in new ways, are playing a key role in identifying the sources of defects leading to potential device reliability problems, and are contributing to the elimination of their sources in the process line.<>

Keywords

VLSI; circuit reliability; failure analysis; integrated circuit testing; ion beam applications; scanning electron microscopy; secondary ion mass spectroscopy; transmission electron microscopy; FIB; SEM; SIMS; TEM; VLSI failure analysis; advanced analytical techniques; defects; focused ion beam microsurgery; potential device reliability problems; process line; scanning electron microscopy; secondary ion mass spectroscopy; transmission electron microscopy; Electron beams; Failure analysis; Ion beams; Mass spectroscopy; Microsurgery; Problem-solving; Scanning electron microscopy; Surgery; Transmission electron microscopy; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66063

Filename

66063