Title :
Use of advanced analytical techniques for VLSI failure analysis
Author :
Banerjee, Lndrajit ; Tracy, Bryan ; Davies, Paul ; McDonald, Bob
Author_Institution :
INTEL Corp., Santa Clara, CA, USA
Abstract :
Several new applications and techniques in the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), focused ion beam (FIB) microsurgery, and secondary ion mass spectroscopy (SIMS) for problem solving are presented. These tools, used in new ways, are playing a key role in identifying the sources of defects leading to potential device reliability problems, and are contributing to the elimination of their sources in the process line.<>
Keywords :
VLSI; circuit reliability; failure analysis; integrated circuit testing; ion beam applications; scanning electron microscopy; secondary ion mass spectroscopy; transmission electron microscopy; FIB; SEM; SIMS; TEM; VLSI failure analysis; advanced analytical techniques; defects; focused ion beam microsurgery; potential device reliability problems; process line; scanning electron microscopy; secondary ion mass spectroscopy; transmission electron microscopy; Electron beams; Failure analysis; Ion beams; Mass spectroscopy; Microsurgery; Problem-solving; Scanning electron microscopy; Surgery; Transmission electron microscopy; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66063
