Title :
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Author :
Tan, H.H. ; Fu, L. ; Johnston, M.B. ; Dao, L.V. ; Gal, M. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Ion (proton) implantation was used to induce intermixing in GaAs/AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; energy gap; gallium arsenide; ion beam mixing; ion implantation; quantum well lasers; rapid thermal annealing; semiconductor quantum wells; GRIN-SCH QW lasers; GaAs-AlGaAs; RTA; effective band gap; improved intermixing; interdiffusion; ion implantation; laser diodes; laser threshold characteristics; multi-wavelength device integration; proton implantation; quantum well structures; repeated implant-anneal sequence; very large energy shifts; Gallium arsenide; Implants; Ion implantation; MOCVD; Optical buffering; Power engineering and energy; Quantum well lasers; Rapid thermal annealing; Semiconductor lasers; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791616
