Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

Author

Tan, H.H. ; Fu, L. ; Johnston, M.B. ; Dao, L.V. ; Gal, M. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1999

fDate

1999

Firstpage

187

Lastpage

190

Abstract

Ion (proton) implantation was used to induce intermixing in GaAs/AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; energy gap; gallium arsenide; ion beam mixing; ion implantation; quantum well lasers; rapid thermal annealing; semiconductor quantum wells; GRIN-SCH QW lasers; GaAs-AlGaAs; RTA; effective band gap; improved intermixing; interdiffusion; ion implantation; laser diodes; laser threshold characteristics; multi-wavelength device integration; proton implantation; quantum well structures; repeated implant-anneal sequence; very large energy shifts; Gallium arsenide; Implants; Ion implantation; MOCVD; Optical buffering; Power engineering and energy; Quantum well lasers; Rapid thermal annealing; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791616

Filename

791616