DocumentCode :
3138266
Title :
Electric-field-controlled MRAM using voltage control of magnetic anisotropy: Progress, scaling, and challenges
Author :
Khalili, P. ; Wang, K.L.
Author_Institution :
UCLA, Los Angeles, CA, USA
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
This paper discussed the development status and challenges of electric-field-controlled magnetic random access memory (MRAM) based on voltage control of magnetic anisotropy (VCMA) in magneto-electric tunnel junctions (MTJs). The use of electric fields for writing in VCMA-based magnetoelectric RAM (i.e. MeRAM) offers two potential advantages: nearly elimination of write currents hence achieving the lowest dynamic energy dissipation among nonvolatile memory technologies; and it does not impose a size limit on the access devices when integrated in a circuit hence allowing for much smaller overall cell area and better bit density. Beyond memory, the low dynamic power dissipation enabled by an electric-field-controlled operation also creates new opportunities for integration of voltage-controlled MTJs into logic and computing architectures.
Keywords :
MRAM devices; magnetic anisotropy; voltage control; MeRAM; VCMA-based magnetoelectric RAM; computing architectures; electric-field-controlled MRAM; logic architectures; lowest dynamic energy dissipation; magnetic anisotropy; magnetic random access memory; magneto-electric tunnel junctions; nonvolatile memory technologies; voltage control; Magnetic resonance; Magnetic tunneling; Perpendicular magnetic anisotropy; Switches; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157429
Filename :
7157429
Link To Document :
بازگشت