DocumentCode
3138271
Title
Dielectric induced interdiffusion of In0.53Ga0.47 As/In0.52Al0.48As multiple quantum wells by two step rapid thermal annealing
Author
Yoo, Kyeongran ; Moon, Youngboo ; Lee, Tae-Wan ; Yoon, Euijoon
Author_Institution
Sch. of Mater. Sci. & Seoul Nat. Univ., South Korea
fYear
1999
fDate
1999
Firstpage
191
Lastpage
194
Abstract
A new scheme for the dielectric-induced interdiffusion of In0.53Ga0.47As/In0.52Al0.48 As MQWs was reported. The vacancy-generating chemical reaction of SiO2 with an In0.53Ga0.47As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; energy gap; gallium arsenide; indium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; vacancies (crystal); In0.53Ga0.47As-In0.52Al0.48As; capping layer; chemical reaction of SiO2; dielectric induced interdiffusion; interdiffusion coefficients; multiple quantum wells; peak shifts; photoluminescence; two step rapid thermal annealing; vacancy-generating chemical reaction; Atomic layer deposition; Chemical vapor deposition; Dielectrics; Indium gallium arsenide; Indium phosphide; Photonic band gap; Plasma temperature; Quantum well devices; Rapid thermal annealing; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791617
Filename
791617
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