Title :
Dielectric induced interdiffusion of In0.53Ga0.47 As/In0.52Al0.48As multiple quantum wells by two step rapid thermal annealing
Author :
Yoo, Kyeongran ; Moon, Youngboo ; Lee, Tae-Wan ; Yoon, Euijoon
Author_Institution :
Sch. of Mater. Sci. & Seoul Nat. Univ., South Korea
Abstract :
A new scheme for the dielectric-induced interdiffusion of In0.53Ga0.47As/In0.52Al0.48 As MQWs was reported. The vacancy-generating chemical reaction of SiO2 with an In0.53Ga0.47As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; energy gap; gallium arsenide; indium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; vacancies (crystal); In0.53Ga0.47As-In0.52Al0.48As; capping layer; chemical reaction of SiO2; dielectric induced interdiffusion; interdiffusion coefficients; multiple quantum wells; peak shifts; photoluminescence; two step rapid thermal annealing; vacancy-generating chemical reaction; Atomic layer deposition; Chemical vapor deposition; Dielectrics; Indium gallium arsenide; Indium phosphide; Photonic band gap; Plasma temperature; Quantum well devices; Rapid thermal annealing; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791617
