Title :
Experimental evidence of side-wall effects on microwave-FET DC and AC performances
Author :
Chen, H.R. ; Huang, G.L.
Author_Institution :
Dept. of Electr. Eng., Private Kung Shan Inst. of Technol. & Commerce, Tainan, China
Abstract :
We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; semiconductor device measurement; GaAs; GaAs FET; mesa-sidewall effects; microwave-FET AC performance; microwave-FET DC performance; side-wall effects; Breakdown voltage; Current-voltage characteristics; FETs; Fabrication; Frequency; Gallium arsenide; Leakage current; Millimeter wave measurements; Performance evaluation; Transconductance;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791623
