InGaP/GaAs resonant-tunneling transistor (RTT)

Author

Liu, W.C. ; Shie, Y.S. ; Chang, W.L. ; Feng, S.C. ; Yu, K.H. ; Yan, J.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1999

fDate

1999

Firstpage

240

Lastpage

242

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE_V) at the InGaP/GaAs heterointerface, a high current gain (β_max≃220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of the current-voltage characteristics at room temperature

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; minority carriers; negative resistance devices; quantum well devices; resonant tunnelling transistors; semiconductor superlattices; valence bands; 20 C; 5-period InGaP/GaAs superlattice; InGaP-GaAs; InGaP/GaAs heterointerface; InGaP/GaAs resonant-tunneling transistor; InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor; N-shaped negative-differential-resistance; confinement barrier; current-voltage characteristics; forward-active region; high current gain; large valence band discontinuity; minority carriers; room temperature; saturation; Bipolar transistors; Carrier confinement; Current-voltage characteristics; Etching; Gallium arsenide; Heterojunction bipolar transistors; Resonant tunneling devices; Superlattices; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791630

Filename

791630