Title :
A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector
Author :
Liu, W.C. ; Wang, W.C. ; Chang, W.L. ; Yu, K.H. ; Feng, S.C. ; Yan, J.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A In0.5Ga0.5P-GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at the emitter-base (E-B) and base-collector (B-C) heterojunction. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device measurement; wide band gap semiconductors; δ-doped wide-gap collector; 1 V; 20 V; 50 mV; DHBT; In0.5Ga0.5P-GaAs; In0.5Ga0.5P/GaAs double heterojunction bipolar transistor; InGaP/GaAs double heterojunction bipolar transistor; base-collector heterojunction; breakdown voltage; current gain; emitter-base heterojunction; high-power; high-speed; large input signal circuit applications; low-power consumption; offset voltage; potential spike; saturation voltage; Breakdown voltage; Chemical processes; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Radio frequency; Superlattices;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791631
