DocumentCode
3138571
Title
Study and modelling hybrid MTJ/Ring memory using SIMON Simulator
Author
Boubaker, A. ; Krout, I. ; Sghaier, N. ; Kalboussi, A.
Author_Institution
Fac. of Sci. of Monastir, Monastir, Tunisia
fYear
2011
fDate
22-25 March 2011
Firstpage
1
Lastpage
4
Abstract
In this paper, we briefly suggest and describe the function of a new memory cell named hybrid MTJ/Ring memory. It is a perfect example of two features combination to obtain new functionalities that are difficult to achieve using either a pure MTJ or ring memory cell alone. We present and discuss their characteristics simulated by SIMON Simulator in order to improve the access process for writing and/or reading single electron memory (SEM).
Keywords
magnetic storage; magnetic tunnelling; single electron devices; SIMON simulation; hybrid MTJ/ring memory; single electron memory reading; single electron memory writing; Capacitance; Junctions; Magnetic tunneling; Quantum dots; Simulation; Single electron memory; Writing; MTJ/Ring memory; Multi-tunnel junction memory; quantum dot; ring memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Systems, Signals and Devices (SSD), 2011 8th International Multi-Conference on
Conference_Location
Sousse
Print_ISBN
978-1-4577-0413-0
Type
conf
DOI
10.1109/SSD.2011.5767411
Filename
5767411
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