Study and modelling hybrid MTJ/Ring memory using SIMON Simulator

In this paper, we briefly suggest and describe the function of a new memory cell named hybrid MTJ/Ring memory. It is a perfect example of two features combination to obtain new functionalities that are difficult to achieve using either a pure MTJ or ring memory cell alone. We present and discuss their characteristics simulated by SIMON Simulator in order to improve the access process for writing and/or reading single electron memory (SEM).