Title :
Integrated Electro-Absorption Modulator and GaAs HBT Driver Circuit
Author :
Freundorfer, A.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ.
Abstract :
A method was developed to double the voltage at the input of an electro-absorption modulator (EAM) by directly mounting the EAM on the driver, without using a matching resistor. The driver circuit was a travelling wave HBT amplifier with a measured 3 dB bandwidth of greater than 40 GHz and a gain of 12 dB. A simulated EAM optical output was shown for a 2.50 Volt 40 Gb/s drive voltage. To my knowledge this is the first such driver/EAM circuit to use the voltage doubling method
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MIMIC; bipolar MMIC; bipolar analogue integrated circuits; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; integrated optoelectronics; travelling wave amplifiers; voltage multipliers; 2.50 V; 40 Gbit/s; EAM; GaAs; driver circuit; electro-absorption modulator; heterojunction bipolar transistor; travelling wave HBT amplifier; voltage doubling method; Bandwidth; Circuit simulation; Driver circuits; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; Optical amplifiers; Resistors; Voltage; Integrated circuits; Modulator driver; optical fiber communications; optical transmitter;
Conference_Titel :
Electrical and Computer Engineering, 2006. CCECE '06. Canadian Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0038-4
Electronic_ISBN :
1-4244-0038-4
DOI :
10.1109/CCECE.2006.277303
