Integrated Electro-Absorption Modulator and GaAs HBT Driver Circuit

Author

Freundorfer, A.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´´s Univ.

fYear

2006

fDate

38838

Firstpage

547

Lastpage

549

Abstract

A method was developed to double the voltage at the input of an electro-absorption modulator (EAM) by directly mounting the EAM on the driver, without using a matching resistor. The driver circuit was a travelling wave HBT amplifier with a measured 3 dB bandwidth of greater than 40 GHz and a gain of 12 dB. A simulated EAM optical output was shown for a 2.50 Volt 40 Gb/s drive voltage. To my knowledge this is the first such driver/EAM circuit to use the voltage doubling method

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MIMIC; bipolar MMIC; bipolar analogue integrated circuits; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; integrated optoelectronics; travelling wave amplifiers; voltage multipliers; 2.50 V; 40 Gbit/s; EAM; GaAs; driver circuit; electro-absorption modulator; heterojunction bipolar transistor; travelling wave HBT amplifier; voltage doubling method; Bandwidth; Circuit simulation; Driver circuits; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; Optical amplifiers; Resistors; Voltage; Integrated circuits; Modulator driver; optical fiber communications; optical transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. CCECE '06. Canadian Conference on

Conference_Location

Ottawa, Ont.

Print_ISBN

1-4244-0038-4

Electronic_ISBN

1-4244-0038-4

Type

conf

DOI

10.1109/CCECE.2006.277303

Filename

4054773