DocumentCode
3138643
Title
Effects of plasma surface pre-treatments on the electrical properties of silicon nitride passivated GaAs MESFETs
Author
Prasad, Krishnamachar
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
1999
fDate
1999
Firstpage
272
Lastpage
274
Abstract
GaAs MESFETs were fabricated using different surface pre-treatments such as photochemical passivation and RF plasma pre-treatments. Detailed electrical characterization of MESFETs was subsequently carried out. The results point out that the use of RF plasma pre-treatments is beneficial to GaAs MESFET device technology. GaAs MESFETs fabricated using RF plasma pre-treatment exhibit improved electrical characteristics and better thermal stability
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; passivation; plasma materials processing; surface treatment; thermal stability; GaAs; I-V characteristics; MESFET; RF plasma pre-treatment; electrical characteristics; photochemical passivation; plasma surface pre-treatments; thermal stability; Electric variables; Gallium arsenide; MESFETs; Passivation; Photochemistry; Plasma devices; Plasma properties; Plasma stability; Radio frequency; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791639
Filename
791639
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